PART |
Description |
Maker |
WG14013FR04 WG12013FR02 WG18015R FR35 WG18027R12 W |
1340 A, 1300 V, GATE TURN-OFF SCR 2150 A, 1500 V, SYMMETRICAL GTO SCR 820 A, 4000 V, GATE TURN-OFF SCR 1685 A, 2700 V, GATE TURN-OFF SCR 870 A, 600 V, GATE TURN-OFF SCR 700 A, 600 V, GATE TURN-OFF SCR 730 A, 1000 V, GATE TURN-OFF SCR 890 A, 1000 V, GATE TURN-OFF SCR
|
WESTCODE SEMICONDUCTORS LTD
|
FG1000BV-90DA FD2000BV-90DA |
Gate turn-off thyristor for high power inverter use press pack type MITSUBISHI GATE TURN-OFF THYRISTORS HIGH POWER INVERTER USE PRESS PACK TYPE
|
Mitsubishi Electric Corporation
|
MGTO1000 MGTO1200 |
GATE TURN OFF THYRISTORS Gate turn-off thyristor / Repetitive peak off-state voltage 1000 V / 18 A RMS
|
MOTOROLA[Motorola, Inc]
|
DG306AE25 |
Gate Turn-off Thyristor 353.25 A, 2500 V, GATE TURN-OFF SCR
|
Dynex Semiconductor, Ltd.
|
GCU35AB-120 |
Gate Commutated Turn-off (GCT) Thyristors/Gate Drive Units
|
Mitsubishi Electric Corporation
|
FGC3500AX-120DS |
Gate Commutated Turn-off (GCT) Thyristors/Gate Drive Units
|
Mitsubishi Electric Corporation
|
DG408BP45 |
Gate Turn-off Thyristor
|
DYNEX[Dynex Semiconductor]
|
DG858BW45 |
Gate Turn-off Thyristor
|
DYNEX[Dynex Semiconductor]
|
DG808BC45-15 |
Gate Turn-off Thyristor
|
Dynex Semiconductor
|
DG808BC45 |
Gate Turn-off Thyristor
|
Dynex Semiconductor
|